| PART |
Description |
Maker |
| ADL5317 ADL5317-EVAL ADL5317ACPZ-REEL7 ADL5317ACPZ |
Avalanche Photodiode Bias Controller and Wide Range (5 nA to 5 mA) Current Monitor
|
ANALOG DEVICES INC
|
| SSO-AD-800-TO5I |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-500-TO52 |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| SSO-AD-230-TO52NF |
Avalanche Photodiode
|
Roithner LaserTechnik GmbH
|
| AD500-9 |
Avalanche Photodiode NIR
|
Silicon Sensor
|
| SRD00514X SRD00514 SRD00514H SRD00515H |
Ge-Avalanche Photodiode with Pigtail
From old datasheet system
|
SIEMENS AG
Infineon
Siemens Semiconductor Group
|
| C30737P-500 C30737 C30737E-230 C30737E-500 C30737P |
From old datasheet system
Epitaxial Silicon Avalanche Photodiode
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| SRD00512Z Q62702-P3042 SRD00512 |
From old datasheet system
Ge-Avalanche Photodiode in TO Package with Integrated Optics
|
SIEMENS[Siemens Semiconductor Group]
|
| C30916E |
Large Area Silicon Avalanche Photodiode for General-Purpose Applications
|
ETC[ETC]
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
